Enhanced plasma etch process

Data processing: generic control systems or specific application – Specific application – apparatus or process – Product assembly or manufacturing

Reexamination Certificate

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C134S001100, C438S009000

Reexamination Certificate

active

10942995

ABSTRACT:
A method of operating a plasma etcher wherein gas is introduced into the etcher at a substantially higher rate than a previous standard rate for a desired etch selectivity, and the throttle valve's open value is set to a substantially greater open value than a previous standard open value for the desired etch selectivity. The method may also include introducing the gas at a lower pressure than the pressure of the previous standard pressure for a desired etch selectivity.

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patent: 2004/0118464 (2004-06-01), Chang et al.
patent: 2004/0217311 (2004-11-01), Lu
patent: 2005/0155718 (2005-07-01), Huang et al.

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