Enhanced planarization technique for an integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

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257647, 257634, H01L 2358

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active

059863307

ABSTRACT:
A method for planarizing integrated circuit topographies, wherein, after a first layer of spin-on glass is deposited, a layer of low-temperature oxide is deposited before a second layer of spin-on glass.

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