Enhanced photodetector

Details Enhanced photodetector Enhanced photodetector

2006-07-18

2006-07-18

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S189000, C257S191000, C257S439000, C257S463000, C257S656000

Reexamination Certificate

active

07078741

ABSTRACT:
The present invention includes a photodiode having a first p-type semiconductor layer and an n-type semiconductor layer coupled by a second p-type semiconductor layer. The second p-type semiconductor layer has graded doping along the path of the carriers. In particular, the doping is concentration graded from a high value near the anode to a lower p concentration towards the cathode. By grading the doping in this way, an increase in absorption is achieved, improving the responsivity of the device. Although this doping increases the capacitance relative to an intrinsic semiconductor of the same thickness, the pseudo electric field that is created by the graded doping gives the electrons a very high velocity which more than compensates for this increased capacitance.

REFERENCES:
patent: 3926693 (1975-12-01), Kawamoto et al.
patent: 4046609 (1977-09-01), Digoy
patent: 4142200 (1979-02-01), Mizushima et al.
patent: 4186355 (1980-01-01), Lo
patent: 4236069 (1980-11-01), Laughlin
patent: 4597004 (1986-06-01), Longeway et al.
patent: 4686550 (1987-08-01), Capasso et al.
patent: 4840916 (1989-06-01), Yasuda et al.
patent: 4887134 (1989-12-01), Saito et al.
patent: 5016073 (1991-05-01), Elliott et al.
patent: 5057892 (1991-10-01), Iwanczyk
patent: 5146296 (1992-09-01), Huth
patent: 5179430 (1993-01-01), Torikai
patent: 5365077 (1994-11-01), Metzger
patent: 5539221 (1996-07-01), Tsuji et al.
patent: 5552629 (1996-09-01), Watanabe
patent: 5581087 (1996-12-01), Uddin et al.
patent: 5654578 (1997-08-01), Watanabe
patent: 5818096 (1998-10-01), Ishibashi et al.
patent: 6081019 (2000-06-01), White
patent: 6107652 (2000-08-01), Scavennec et al.
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6229162 (2001-05-01), Watanabe
patent: 6326650 (2001-12-01), Allam
patent: 6359322 (2002-03-01), Haralson et al.
patent: 2002/0070384 (2002-06-01), Clark et al.
patent: 2003/0021322 (2003-01-01), Steinle et al.
patent: WO 03/065416 (2003-08-01), None
patent: WO 03/065417 (2003-08-01), None
patent: WO 03/065418 (2003-08-01), None
Watanabe et al., IEEE Photonics Tehncology Letter 8, pp. 827-829, 1996.

Affiliated with

Also associated with

Rating

Enhanced photodetector does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhanced photodetector, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced photodetector will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3537178