Enhanced performance bipolar transistor process

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 55, 437133, 148DIG72, H01L 21265

Patent

active

053690427

ABSTRACT:
This is a method of forming a bipolar transistor comprising: forming a subcollector layer, having a doping type and a doping level, on a substrate; forming a first layer, of the same doping type and a lower doping level than the subcollector layer, over the subcollector layer; increasing the doping level of first and second regions of the first layer; forming a second layer, of the same doping type and a lower doping level than the subcollector layer, over the first layer; increasing the doping level of a first region of the second layer which is over the first region of the first layer, whereby the subcollector layer, the first region of the first layer and the first region of the second layer are the collector of the transistor; forming a base layer over the second layer of an opposite doping type than the subcollector layer; and forming an emitter layer of the same doping type as the subcollector layer over the base layer. Other devices and methods are also disclosed.

REFERENCES:
patent: 3638079 (1972-01-01), Chan
patent: 3702428 (1972-11-01), Schmitz et al.
patent: 4087900 (1978-05-01), Yiannoulos
patent: 4573064 (1986-02-01), McLevige et al.
patent: 4672414 (1987-06-01), Gabriel et al.
patent: 4997776 (1991-03-01), Harame et al.
patent: 5068756 (1991-11-01), Morris et al.
patent: 5162252 (1992-11-01), Kanda et al.
Tully, et al., "A Fully Planar Heterojunction Bipolar Transistor", IEEE Electron Device Letters, vol. EDL-7, No. 11, Nov. 1986, pp. 615-617.
John W. Tully, "Heterojunction Bipolar Transistors with Ion-Implanted Bases", IEEE Electron Device Letters, vol. EDL-7, No. 4, Apr. 1986, pp. 203-205.
Tran, et al., "GaAs/AlGaAs Heterojunction Emitter-Down Bipolar Transistors Fabricated on GaAs-on-Si Substrate", IEEE Electron Device Letters, vol. EDL-8, No. 2, Feb. 1987, pp. 50-52.
Nagata, et al., "Self-Aligned AlGaAs/GaAs HBT with Low Emitter Resistance Utilizing InGaAs Cap Layer", IEEE Transactions on Electron Devices, vol. ED-35, No. 1, Jan. 1988, pp. 2-7.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Enhanced performance bipolar transistor process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhanced performance bipolar transistor process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced performance bipolar transistor process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-73734

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.