Enhanced performance bipolar transistor process

Details Enhanced performance bipolar transistor process Enhanced performance bipolar transistor process

1994-06-08

1995-04-18

Hearn, Brian

Fishing, trapping, and vermin destroying

437 33, 437126, 437133, 437128, 148DIG10, 148DIG72, H01L 21265

Patent

active

054078423

ABSTRACT:
This is a method of forming a bipolar transistor comprising: forming a subcollector layer, having a doping type and a doping level, on a substrate; forming a first layer, of the same doping type and a lower doping level than the subcollector layer, over the subcollector layer; increasing the doping level of first and second regions of the first layer; forming a second layer, of the same doping type and a lower doping level than the subcollector layer, over the first layer; increasing the doping level of a first region of the second layer which is over the first region of the first layer, whereby the subcollector layer, the first region of the first layer and the first region of the second layer are the collector of the transistor; forming a base layer over the second layer of an opposite doping type than the subcollector layer; and forming an emitter layer of the same doping type as the subcollector layer over the base layer. Other devices and methods are also disclosed.

REFERENCES:
patent: 5106767 (1992-04-01), Comfort et al.
patent: 5166083 (1992-11-01), Bayraktaroglu
patent: 5217909 (1993-06-01), Bertagnolli
patent: 5234846 (1993-08-01), Chu et al.
patent: 5266505 (1993-11-01), Ahlgren et al.
patent: 5294558 (1994-03-01), Subanna

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