Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2004-01-27
2008-08-26
Schillinger, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S254000, C438S398000
Reexamination Certificate
active
07416954
ABSTRACT:
An apparatus including a capacitor formed between metallization layers on a circuit, the capacitor including a bottom electrode coupled to a metal layer and a top electrode coupled to a metal via wherein the capacitor has a corrugated sidewall profile. A method including forming an interlayer dielectric including alternating layers of dissimilar dielectric materials in a multilayer stack over a metal layer of a device structure; forming a via having a corrugated sidewall; and forming a decoupling capacitor stack in the via that conforms to the sidewall of the via.
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Block Bruce A.
List Richard Scott
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Schillinger Laura M
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