Fishing – trapping – and vermin destroying
Patent
1996-05-03
1997-11-04
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437 41, 437110, H01L 2124
Patent
active
056839340
ABSTRACT:
An enhanced mobility MOSFET device (10) comprises a channel layer (12) formed on a monocrystalline silicon layer (11). The channel layer (12) comprises an alloy of silicon and a second material with the second material substitutionally present in silicon lattice sites at an atomic percentage that places the channel layer (12) under a tensile stress.
REFERENCES:
patent: 4966859 (1990-10-01), Risch et al.
patent: 4994866 (1991-02-01), Awano
patent: 5019882 (1991-05-01), Solomon et al.
patent: 5036374 (1991-07-01), Shimbo
patent: 5155571 (1992-10-01), Wang et al.
patent: 5227644 (1993-07-01), Ueno
patent: 5272365 (1993-12-01), Nakagawa
patent: 5360986 (1994-11-01), Candelaria
patent: 5589410 (1996-12-01), Sato et al.
patent: 5593928 (1997-01-01), Lee
Welser et al., "Electron Mobility Enhancement in Strained-SI N-Type Metal-Oxide-Semiconductor Field-Effect Transistors", IEEE Electron Device Letters, Mar. 1, 1994, vol. 15, No. 3, pp. 100-102.
R. People et al., Band Alignments of coherently strained Ge.sub.x Si.sub.1-x /Si heterostructures on <001> Ge.sub.y Si.sub.1-y Substrates, Appl. Phys. Lett. vol. 48, No. 8, 24 Feb. 1986, pp. 538-540.
Alexander A. Demkov and Otto Sankey, Theoretical Investigation of Random Si-C Alloys, The American Physical Society, vol. 48 No. 4, Jul. 15, 1993, pp. 2207-2214.
Chaudhari Chandra
Jackson Kevin B.
Motorola Inc.
LandOfFree
Enhanced mobility MOSFET device and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Enhanced mobility MOSFET device and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced mobility MOSFET device and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1832738