Enhanced mobility MOSFET device and method

Details Enhanced mobility MOSFET device and method Enhanced mobility MOSFET device and method

1994-09-26

1996-10-01

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 77, 257190, 257212, H01L 2906

Patent

active

055613020

ABSTRACT:
An enhanced mobility MOSFET device (10) comprises a channel layer (12) formed on a monocrystalline silicon layer (11). The channel layer (12) comprises an alloy of silicon and a second material with the second material substitutionally present in silicon lattice sites at an atomic percentage that places the channel layer (12) under a tensile stress.

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R. People et al., Band Alignments of coherently strained Ge.sub.X Si.sub.1-x / Si heterostructures on <001> Ge.sub.y Si.sub.1-y Substrates, Appl. Phys. Lett. vol. 48, No. 8, 24 Feb. 1986, pp. 538-540.

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