Enhanced mobility buried channel transistor structure

Details Enhanced mobility buried channel transistor structure Enhanced mobility buried channel transistor structure

1984-10-12

1986-07-15

James, Andrew J.

357 16, 357 61, H01L 2980

Patent

active

046009329

ABSTRACT:
An enhanced mobility buried channel transistor structure in which the quasi-two-dimensional electron gas (2DEG) which forms the conducting channel in the structure is removed from the proximity of the heterointerface, and is placed in a region remote therefrom. A "tapered" layer of Al.sub.x Ga.sub.1-x As is provided, where x varies from maximum to minimum as the interface with an undoped layer of GaAs is approached.

REFERENCES:
Lee et al., "High Temperature Annealing of Modulation Doped GaAs/AlGaAs Heterostructures for FET Applications", Proceedings IEEE/Cornell Conference on High-Speed Semiconductor Devices & Circuits, Aug. 1983, pp. 204-208.

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