Enhanced memory density resistance variable memory cells,...

Details Enhanced memory density resistance variable memory cells,... Enhanced memory density resistance variable memory cells,...

2010-08-02

2011-10-04

Lee, Hsien Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S005000, C257SE31001, C257SE31008, C438S095000, C438S242000, C438S259000

Reexamination Certificate

active

08030636

ABSTRACT:
A resistance variable memory cell and method of forming the same. The memory cell includes a first electrode and at least one layer of resistance variable material in contact with the first electrode. A first, second electrode is in contact with a first portion of the at least one layer of resistance variable material and a second, second electrode is in contact with a second portion of the at least one layer of resistance variable material.

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