Enhanced electromigration lifetime of metal interconnection line

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257211, 257767, 257775, H01L 23528, H01L 23535

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active

056891393

ABSTRACT:
The electromigration lifetime of a metal interconnection line is increased by adjusting the length of the interconnection line or providing longitudinally spaced apart holes or vias to optimize the backflow potential capacity of the metal interconnection line. In addition, elongated slots are formed through the metal interconnection line so that the total width of metal across the interconnection line is selected for optimum electromigration lifetime in accordance with the Bamboo Effect for that metal.

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