Enhanced conductivity quantum well structure having resonant int

Details Enhanced conductivity quantum well structure having resonant int Enhanced conductivity quantum well structure having resonant int

1991-04-08

1992-08-25

James, Andrew J.

357 4, 357 22, 357 234, H01L 29161, H01L 29205, H01L 29225, H01L 2712

Patent

active

051423413

ABSTRACT:
An enhanced conductivity structure comprising first and second coupled quantum well channel layers spaced from each other by a barrier layer of predetermined thickness is provided. The barrier layer and other supporting layers comprise a first material type, while the first and second quantum wells comprise a second material type having a narrower bandgap than the first material type. Each of the quantum wells is thin to confine current flow to the plane of the quantum wells. First and second spacer layers of the first material type are formed adjacent to each of the quantum wells, and planar doping layers are provided on each of the spacer layers. First and second buffer layers of the first material type are formed adjacent to each of the spacer layers.

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Kash "Picosecond Studies of Hot Phonon Generation in III-V semiconductors" SPIE vol. 942, (1988). pp. 138-144.
Ridley "Electron Scattering by Confined LO Polar Phonons in a Quantum Well" Physical Review B vol. 39, No. 8 (Mar. 15, 1989) pp. 5282-5286.

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