Enhanced conductivity quantum well having resonant charge coupli

Details Enhanced conductivity quantum well having resonant charge coupli Enhanced conductivity quantum well having resonant charge coupli

1990-03-30

1991-04-30

Hille, Rolf

357 16, 357 17, H01L 2712, H01L 4500, H01L 2900, H01L 3300

Patent

active

050123025

ABSTRACT:
An enhanced conductivity superlattice structure is provided in which a phonon generator embedded in a quantum well promotes formation of paired electrons. The superlattice structure provides electrons confined in a narrow energy gap material which is sandwiched between two barrier layers made of larger bandgap material. The electrons are provided to the quantum well by doping material in the barrier layers to provide modulation doping of the qnantum well. The quantum well contains at least one monolayer of another material within its boundaries which is a source of phonons which are generated for the purpose of electron-phonon coupling in order to cause electron pairing. In a preferred embodiment a plurality of phonon generator monolayers will be provided in the center of a quantum well, wherein the phonon generator monolayers are separated from each other by a few monolayers of quantum well material to provide increased number of phonons and therefore increased number of electron-phonon interactions.

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"Stimulated Emission in Ultrathin (20 .ANG.), AlxGa1-x As-GaAs Single Quantum Well", Lo et al., Appl. Phys. Lett., vol. 52, #22, 30 May 88, pp. 1853-1855.

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