Enhanced chemical-mechanical polishing (E-CMP) method of forming

Details Enhanced chemical-mechanical polishing (E-CMP) method of forming Enhanced chemical-mechanical polishing (E-CMP) method of forming

1996-10-31

1998-09-22

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 22, B44C 122

Patent

active

058113550

ABSTRACT:
A method of enhanced chemical-mechanical polishing (E-CMP) utilizes an oxygen-rich liquid etchant in an abrasive slurry to form a substantially planar surface on a thin film magnetic head to substantially avoid pole recession. Illumination of the thin film magnetic head with ultraviolet light during E-CMP polishing greatly enhances the effect of the oxygen-rich etchant.

REFERENCES:
patent: 5087332 (1992-02-01), Chen

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