Enhanced anti-parallel-pinned sensor using thin ruthenium...

Details Enhanced anti-parallel-pinned sensor using thin ruthenium... Enhanced anti-parallel-pinned sensor using thin ruthenium...

2008-07-11

2010-12-07

Evans, Jefferson (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C428S811200

Reexamination Certificate

active

07848064

ABSTRACT:
An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.

REFERENCES:
patent: 6592725 (2003-07-01), Lin et al.
patent: 6603643 (2003-08-01), Hoshiya et al.
patent: 6620530 (2003-09-01), Li et al.
patent: 6775903 (2004-08-01), Horng et al.
patent: 6822838 (2004-11-01), Lin et al.
patent: 6972934 (2005-12-01), Horng et al.
patent: 7126848 (2006-10-01), Nakamura et al.
patent: 7161771 (2007-01-01), Lin et al.
patent: 2004/0012898 (2004-01-01), Hasegawa
patent: 2005/0061658 (2005-03-01), Lin et al.
patent: 2005/0073777 (2005-04-01), Hasegawa et al.
patent: 2006/0098354 (2006-05-01), Parkin
patent: 2006/0162148 (2006-07-01), Horng et al.
patent: 2006/0168797 (2006-08-01), Li et al.
patent: 2007/0217082 (2007-09-01), Lin
patent: 2009/0325319 (2009-12-01), Horng et al.

Affiliated with

Also associated with

Rating

Enhanced anti-parallel-pinned sensor using thin ruthenium... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhanced anti-parallel-pinned sensor using thin ruthenium..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced anti-parallel-pinned sensor using thin ruthenium... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4213506