Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2005-02-01
2008-08-05
Evans, Jefferson (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
07408747
ABSTRACT:
An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
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Search Report from EP Application No. 06000077.5-2210 mailed Oct. 8, 2007.
Lee Wen-Yaung
Li Jinshan
Mauri Daniele
Nishioka Koichi
Tajima Yasunari
Evans Jefferson
Hitachi Global Storage Technologies - Netherlands B.V.
Zilka-Kotab, PC
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