Enhanced adhesion of films to semiconductors or metals by high e

Details Enhanced adhesion of films to semiconductors or metals by high e Enhanced adhesion of films to semiconductors or metals by high e

1982-07-02

1985-07-02

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 29571, 148187, 427 38, H01L 21265, C23C 1302

Patent

active

045266247

ABSTRACT:
Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.

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