Enhanced adhesion by high energy bombardment

Details Enhanced adhesion by high energy bombardment Enhanced adhesion by high energy bombardment

1981-12-07

1984-07-03

Robinson, Ellis P.

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Physical dimension specified

1562722, 1562739, 427 38, 427 431, 428209, 428335, 428336, 428420, 428422, 428433, 428434, 428446, 428457, 428461, 428463, 428901, 428450, 29900, 430318, 376158, 376190, B32B 704, B32B 1504

Patent

active

044579721

ABSTRACT:
Films (12) of gold, copper, silicon nitride, or other materials are firmly bonded to insulator substrates (12) such as silica, a ferrite, or Teflon (polytetrafluorethylene) by irradiating the interface with high energy ions. Apparently, track forming processes in the electronic stopping region cause intermixing in a thin surface layer resulting in improved adhesion without excessive doping. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters.

REFERENCES:
patent: 3296011 (1967-01-01), McBride
patent: 3309221 (1967-03-01), Smith
patent: 3682729 (1972-08-01), Gukelberger, Jr. et al.
patent: 4256780 (1981-03-01), Gaerttner

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