Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Patent
1996-09-05
1998-11-10
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
257508, 438462, H01L 23544
Patent
active
058348298
ABSTRACT:
An energy relieving, redundant crack stop and the method of producing the same is disclosed. The redundant pattern allows the crack propagating energy that is not absorbed by the first ring of metallization to be absorbed by a second area of metallization and also provides a greater surface area over which the crack producing energy may be spread. The redundant crack stop is produced during the metallization process along with the rest of the wiring of the chip surface and, therefore, no additional production steps are necessary to form the structure.
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Dinkel Bettina A.
Lee Pei-Ing
Levine Ernest N.
Crane Sara W.
International Business Machines - Corporation
Neff Daryl K.
Siemens Components Inc.
Wille Douglas A.
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