Energy efficient method for growing polycrystalline silicon

Details Energy efficient method for growing polycrystalline silicon Energy efficient method for growing polycrystalline silicon

2006-09-12

2006-09-12

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S084000, C117S087000, C117S921000

Reexamination Certificate

active

07105053

ABSTRACT:
Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites develop due to the deposition of silicon from silicon-containing molecules in the surrounding reactor atmosphere. Thereafter, the surface temperature is gradually reduced so that silicon that deposits on the needle-like dendrites causes the dendrites to grow and assume a generally flared shape.

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