Energy dispersive semiconductor X-ray detector with improved sil

Details Energy dispersive semiconductor X-ray detector with improved sil Energy dispersive semiconductor X-ray detector with improved sil

1998-03-06

2000-11-28

Hannaher, Constantine

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

25037001, 25037005, 25037006, G01T 124

Patent

active

061538833

ABSTRACT:
An energy dispersive X-ray detector assembly has a detector element of a high-purity silicon substrate with a pair of electrodes, one on either side of the silicon substrate, to create an depletion layer in the silicon substrate when an electric field is created between the electrodes to enable the detection of X-rays. The silicon substrate has a resistivity of at least 10 k.OMEGA..multidot.cm and a thickness in the incident direction of the X-rays of approximately 3 to 5 mm. A refrigerator system, such as a closed cycle gas circulation refrigerator, can be used to cool the detector element to enable the provision of a compact detector assembly.

REFERENCES:
patent: 4893016 (1990-01-01), Katagiri
patent: 5281822 (1994-01-01), Albrecht et al.
Large Area, Low Capacitance Si (Li) Detectors for High Rate X-Ray Applications; Oct. 1992; C.S. Rossington, P.M. Fine, and N.W. Madden, Engineering Science Department, Engineering Division, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720; supported by Office of Energy Research, Office of Biological and Environmental Research, Analytical Technology Division of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098.

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