Energy absorbing structures to prevent damage to an integrated c

Details Energy absorbing structures to prevent damage to an integrated c Energy absorbing structures to prevent damage to an integrated c

1997-09-30

1999-03-09

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257758, 257773, H01L 2348, H01L 2352, H01L 2940

Patent

active

058805281

ABSTRACT:
The present invention provides in one embodiment thereof an integrated circuit (IC). The IC includes a silicon substrate and a dielectric layer formed upon the silicon substrate. The IC further includes a terminal metal layer (TML) formed upon the dielectric layer. The dielectric layer and the TML form a die active area. The IC also includes a first guard ring formed out of the TML. The first guard encloses the die active area. Furthermore the IC includes a second guard ring formed out of the TML. The second guard ring encloses the first guard ring.

REFERENCES:
patent: 5270256 (1993-12-01), Bost et al.
patent: 5757060 (1998-05-01), Lee et al.
patent: 5757072 (1998-09-01), Gorowitz et al.

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