Optics: measuring and testing – By dispersed light spectroscopy – Utilizing a spectrometer
Patent
1996-02-16
1998-07-07
Font, Frank G.
Optics: measuring and testing
By dispersed light spectroscopy
Utilizing a spectrometer
356358, G01B 902
Patent
active
057777390
ABSTRACT:
The present invention is an endpoint detector and a method for quickly and accurately measuring the change in thickness of a wafer in chemical-mechanical polishing processes. The endpoint detector has a reference platform, a measuring face, and a distance measuring device. The reference platform is positioned proximate to the wafer carrier, and the reference platform and measuring device are positioned apart from one another by a known, constant distance. The measuring face is fixedly positioned with respect to the wafer carrier at a location that allows the measuring device to engage the measuring face when the wafer is positioned on the reference platform. Each time the measuring device engages the measuring surface, it measures the displacement of the measuring face with respect to the measuring device. The displacement of the measuring face is proportional to the change in thickness of the wafer between measurements.
REFERENCES:
patent: 4200395 (1980-04-01), Smith et al.
patent: 4203799 (1980-05-01), Sugawara et al.
patent: 4358338 (1982-11-01), Downey et al.
patent: 4367044 (1983-01-01), Booth, Jr. et al.
patent: 4377028 (1983-03-01), Imahashi
patent: 4422764 (1983-12-01), Eastman
patent: 4640002 (1987-02-01), Phillips et al.
patent: 4660980 (1987-04-01), Takabayashi et al.
patent: 4717255 (1988-01-01), Ulbers
patent: 5036015 (1991-07-01), Sandhu et al.
patent: 5081796 (1992-01-01), Schultz
patent: 5220405 (1993-06-01), Barbee et al.
patent: 5324381 (1994-06-01), Nishiguchi
patent: 5369488 (1994-11-01), Morokuma
patent: 5413941 (1995-05-01), Koos et al.
patent: 5433651 (1995-07-01), Lustig et al.
patent: 5461007 (1995-10-01), Kobayashi
patent: 5465154 (1995-11-01), Levy
Doan Trung Tri
Sandhu Gurtej Singh
Font Frank G.
Kim Robert
Micro)n Technology, Inc.
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