Endpoint detector and method for measuring a change in wafer thi

Details Endpoint detector and method for measuring a change in wafer thi Endpoint detector and method for measuring a change in wafer thi

1998-06-30

1999-08-10

Kim, Robert

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

356359, G01B 902

Patent

active

059367334

ABSTRACT:
The present invention is an endpoint detector and a method for quickly and accurately measuring the change in thickness of a wafer in chemical-mechanical polishing processes. The endpoint detector has a reference platform, a measuring face, and a distance measuring device. The reference platform is positioned proximate to the wafer carrier, and the reference platform and measuring device are positioned apart from one another by a known, constant distance. The measuring face is fixedly positioned with respect to the wafer carrier at a location that allows the measuring device to engage the measuring face when the wafer is positioned on the reference platform. Each time the measuring device engages the measuring surface, it measures the displacement of the measuring face with respect to the measuring device. The displacement of the measuring face is proportional to the change in thickness of the wafer between measurements.

REFERENCES:
patent: 4422764 (1983-12-01), Eastman
patent: 4660980 (1987-04-01), Takabayashi et al.

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