Endpoint detection for semiconductor processes

Details Endpoint detection for semiconductor processes Endpoint detection for semiconductor processes

1998-04-17

2000-06-27

Kim, Robert H.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

356369, G01B 902

Patent

active

060813342

ABSTRACT:
A substrate 20 in a process chamber 42 is processed at process conditions suitable for processing a layer 30 on the substrate 20, the process conditions comprising one or more of process gas composition and flow rates, power levels of process gas energizers, process gas pressure, and substrate temperature. The intensity of a reflected light beam 78 reflected from the layer 30 on the substrate 20 is measured over time, to determine a measured waveform pattern. The measured waveform pattern is compared to a pretetermined characteristic waveform pattern, and when the two waveform patterns are similar or substantially the same, the process conditions are changed to change a rate of processing or a process selectivity ratio of the layer 30 on the substrate 20 before the entire layer 30 is completely processed.

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