Endpoint control for small open area by RF source parameter Vdc

Details Endpoint control for small open area by RF source parameter Vdc Endpoint control for small open area by RF source parameter Vdc

2005-08-16

2005-08-16

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S009000, C438S010000, C438S706000, C216S061000

Reexamination Certificate

active

06930049

ABSTRACT:
A method of detecting endpoint of a plasma etching system that measures the DC voltage drop across both the sheath and the film being etched. When the film is nearly removed, a drop in voltage indicates thinning of the film which detects endpoint for etching before optical emission techniques. The voltage drop is measured across resistors within the matching network.

REFERENCES:
patent: 5856239 (1999-01-01), Bashir et al.
patent: 6228278 (2001-05-01), Winniczek et al.

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