Endpoint control for small open area by RF source parameter Vdc

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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Details

C438S009000, C438S010000, C438S706000, C216S061000

Reexamination Certificate

active

06930049

ABSTRACT:
A method of detecting endpoint of a plasma etching system that measures the DC voltage drop across both the sheath and the film being etched. When the film is nearly removed, a drop in voltage indicates thinning of the film which detects endpoint for etching before optical emission techniques. The voltage drop is measured across resistors within the matching network.

REFERENCES:
patent: 5856239 (1999-01-01), Bashir et al.
patent: 6228278 (2001-05-01), Winniczek et al.

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