End station for a parallel beam ion implanter

Details End station for a parallel beam ion implanter End station for a parallel beam ion implanter

1992-03-05

1993-07-20

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25044211, 250398, H01J 3720

Patent

active

052296156

ABSTRACT:
An end station for an ion implanter includes a loading station, a loadlock station, a vacuum chamber and a wafer handler within the vacuum chamber. The wafer handler includes a wafer-receiving platen assembly on the end of a multiple axis arm system wherein the arm system is capable of positioning the wafer for low and high angle of incidence implantation, rotating the wafer about an axis perpendicular to the wafer surface, and effecting scanning motion of the wafer along a straight line which intercepts the wafer tilt axis in any tilt position of the platen assembly. The invention further includes a loadlock including an upper element receiving wafers from the loading station and a lower element operable to position wafers for engagement by a transfer arm which transfers wafers from the loadlock to the wafer handler.

REFERENCES:
patent: 3778626 (1973-12-01), Robertson
patent: 4745287 (1988-05-01), Turner
patent: 4975586 (1991-12-01), Ray
patent: 5003183 (1991-03-01), Nogami et al.
patent: 5046992 (1991-09-01), Tamai et al.
patent: 5052884 (1991-10-01), Igari

Affiliated with

Also associated with

Rating

End station for a parallel beam ion implanter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with End station for a parallel beam ion implanter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and End station for a parallel beam ion implanter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1762563