Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Patent
1997-10-01
1999-09-21
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
257 96, 257 97, H01L 3300
Patent
active
059557486
ABSTRACT:
An end facet light emitting type LED has a slanted light emitting side wall relative to a substrate surface. A method for manufacturing end facet light emitting type light emitting devices prevents the pn-junction regions of the devices from being damaged while a semiconductor wafer is diced to separate light emitting devices from one another. A recess is formed on the semiconductor wafer having a depth which is deeper than the pn-junction. A portion to be cut during dicing of the wafer is vertically and horizontally separated from the pn-junction regions, so that if cracks occur when the wafer is diced, the cracks do not affect the light emitting characteristics of the devices.
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Fujiwara Hiroyuki
Ishimaru Makoto
Koizumi Masumi
Kusano Takao
Nakamura Yukio
Crane Sara
OKI Electric Industry Co., Ltd.
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