Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1996-12-09
1999-02-09
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 98, N01L 3300
Patent
active
058698485
ABSTRACT:
An end face light-emitting-type LED has a first-conductive-type semiconductor substrate and a second-conductive-type diffusion region formed on a first surface of the first-conductive-type semiconductor substrate so as to have a depth within a predetermined value. The first-conductive-type semiconductor substrate has a second surface which meets the first surface at a predetermined angle with the first surface. A junction between the first-conductive-type semiconductor substrate and the second-conductive-type diffusion region includes an inclined portion with regard to the first surface in the vicinity of an edge portion of the junction which is on a side of the second surface, and light emerges from the junction via the second surface.
REFERENCES:
patent: 5260588 (1993-11-01), Ohta et al.
Dyment et al, "Top and Side Emisson From Double Heterostructure . . . " IEEE Trans on ED vol. ED-24 No. 7, Jul. 1977.
Fujiwara Hiroyuki
Ishimaru Makoto
Koizumi Masumi
Nakamura Yukio
Nobori Masaharu
Meier Stephen D.
OKI Electric Industry Co., Ltd.
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