End face light-emitting-type LED, end face light-emitting-type L

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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257 98, N01L 3300

Patent

active

058698485

ABSTRACT:
An end face light-emitting-type LED has a first-conductive-type semiconductor substrate and a second-conductive-type diffusion region formed on a first surface of the first-conductive-type semiconductor substrate so as to have a depth within a predetermined value. The first-conductive-type semiconductor substrate has a second surface which meets the first surface at a predetermined angle with the first surface. A junction between the first-conductive-type semiconductor substrate and the second-conductive-type diffusion region includes an inclined portion with regard to the first surface in the vicinity of an edge portion of the junction which is on a side of the second surface, and light emerges from the junction via the second surface.

REFERENCES:
patent: 5260588 (1993-11-01), Ohta et al.
Dyment et al, "Top and Side Emisson From Double Heterostructure . . . " IEEE Trans on ED vol. ED-24 No. 7, Jul. 1977.

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