Enclosed ferroelectric stacked capacitor

Details Enclosed ferroelectric stacked capacitor Enclosed ferroelectric stacked capacitor

1991-02-28

1992-01-14

Griffin, Donald

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

357 236, H01L 2968, H01G 406

Patent

active

050815598

ABSTRACT:
This invention relates to semiconductor circuit memory storage devices and more particularly to a process to develop three-dimensional stacked cell capacitors using a PZT ferroelectric material as a storage cell dielectric for use in high-density dynamic random access memory (DRAM) arrays. The present invention employs using PZT ferroelectric for the storage cell dielectric in three-dimensional stacked capacitor technology and develops an existing stacked capacitor fabrication process to construct a PZT three-dimensional stacked capacitor cell (the EFSC) that will allow denser storage cell fabrication with minimal increases of overall memory array dimensions. A capacitance gain of 3 to 10X or more over that of a conventional 3-dimensional storage cell is gained by using PZT ferroelectric as the storage cell dielectric.

REFERENCES:
patent: 5001526 (1991-03-01), Gotou
patent: 5012309 (1991-04-01), Nakayama
patent: 5023683 (1991-06-01), Yamada
"A Ferroelectric Dram Cell for High-Density NVRAM's", by Reza Moazzami et al., IEEE Electronic Device Letters, vol. 11, No. 10, Oct. 1990, pp. 455-456.

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