Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-01-11
2005-01-11
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S066000, C349S038000, C349S039000, C349S042000
Reexamination Certificate
active
06841798
ABSTRACT:
A thin film transistor liquid crystal display. At least a gate line and a data line define at least one pixel area. An enclosed cavity is formed in the gate line to separate the gate line into a first gate region and a second gate region. A thin film transistor has a gate electrode that is the first gate region or the second gate region, a source electrode that is an extension of the data line and is over the enclosed cavity, and a drain electrode. A pixel electrode covers the pixel area and is electrically connected to the drain electrode.
REFERENCES:
patent: 5852482 (1998-12-01), Kim
patent: 5969778 (1999-10-01), Oh et al.
Chung Te-Cheng
Jen Tean-Sen
Lee Seok Lyul
Lin Ming-Tien
Dickey Thomas L
Hannstar Display Corp.
Thomas Kayden Horstemeyer & Risley
Tran Minhloan
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