Enclosed buried channel transistor

Details Enclosed buried channel transistor Enclosed buried channel transistor

1988-06-23

1990-03-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 34, 437 57, 357 233, 357 2312, H01L 21265, H01L 2700

Patent

active

049065882

ABSTRACT:
An enclosed buried channel device includes a buried channel region (26) disposed under a gate electrode (24). Source and drain regions (54) and (56) are formed on either side of gate electrode (26). The source/drain regions (54) and (56) are separated from the various channel region (26) by isolating regions of N-type material (58) and (60), respectively. The isolating regions (58) and (60) are operable to be inverted during normal operation of the transistor when the transistor is conducting, but are operable to isolate fields on the drain side of the transistor from the buried channel region (26) to lower the leakage current of the device in the off state.

REFERENCES:
patent: 3305708 (1967-02-01), Ditrick
patent: 3996655 (1976-12-01), Cunningham et al.
patent: 4062699 (1977-12-01), Armstrong
patent: 4070687 (1978-01-01), Ho et al.
patent: 4078947 (1978-03-01), Johnson et al.
patent: 4142926 (1979-03-01), Morgan
patent: 4143388 (1979-03-01), Esaki et al.
patent: 4173818 (1979-11-01), Bassous et al.
patent: 4205330 (1980-05-01), Klein
patent: 4209349 (1980-06-01), Ho et al.
patent: 4229756 (1980-10-01), Sato et al.
patent: 4236167 (1980-11-01), Woods
patent: 4247860 (1981-01-01), Tihanyi
patent: 4282539 (1981-08-01), Schrader
patent: 4382826 (1983-05-01), Pfleiderer et al.
patent: 4514897 (1985-05-01), Chiu et al.
patent: 4677735 (1987-07-01), Malhi
patent: 4697198 (1987-09-01), Komori
patent: 4746624 (1988-05-01), Cham
"Self-Aligned P.sup.+ Implanted Regions for Compound Semiconductor FETs", IBM Technical Disclosure Bulletin, vol. 31, No. 4, Sep. 1988, pp. 421-423.
Ogura et al., "A Half Micron MOSFET Using Double Implanted LDD", IEDM 1982, pp. 718-721.

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