Encapsulation method for localized oxidation of silicon

Details Encapsulation method for localized oxidation of silicon Encapsulation method for localized oxidation of silicon

1989-10-02

1990-05-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 72, H01L 2176

Patent

active

049277804

ABSTRACT:
An improved LOCOS isolation process is disclosed wherein an oxidizable layer is conformably dieposited to overlie a silicon nitride oxidation mask. In accordance with one embodiment of the invention, a composite layer comprising a buffer layer and an oxidation resistant material is patterned to form an oxidation mask on a silicon substrate. A layer of an oxidizable material is conformably deposited to overlie the oxidation mask. During the oxidation process used to form electrical isolation structures in the substrate, a substantial reduction in lateral oxidation encroachment is realized.

REFERENCES:
patent: 4636281 (1987-01-01), Buiguez et al.

Affiliated with

Also associated with

Rating

Encapsulation method for localized oxidation of silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Encapsulation method for localized oxidation of silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Encapsulation method for localized oxidation of silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2134701