Encapsulated organic semiconductor device and method

Semiconductor device manufacturing: process – Having organic semiconductive component

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S115000, C257S040000, C257SE23002, C257SE21502

Reexamination Certificate

active

11108025

ABSTRACT:
A semiconductor device comprising organic semiconductor material (14) has one or more barrier layers (16) disposed at least partially thereabout to protect the organic semiconductor material (14) from environment-driven changes that typically lead to inoperability of a corresponding device. If desired, the barrier layer can be comprised of partially permeable material that allows some substances therethrough to thereby effect disabling of the encapsulated organic semiconductor device after a substantially predetermined period of time. Getterers (141) may also be used to protect, at least for a period of time, such organic semiconductor material.

REFERENCES:
patent: 4925610 (1990-05-01), Wessling et al.
patent: 5140502 (1992-08-01), Kudoh et al.
patent: 5693977 (1997-12-01), Haddon et al.
patent: 6335267 (2002-01-01), Iwamatsu et al.
patent: 6358664 (2002-03-01), Nirmal et al.
patent: 6365527 (2002-04-01), Yang et al.
patent: 6388285 (2002-05-01), Black et al.
patent: 6482564 (2002-11-01), Nirmal et al.
patent: 6548912 (2003-04-01), Graff et al.
patent: 6566156 (2003-05-01), Sturm et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Encapsulated organic semiconductor device and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Encapsulated organic semiconductor device and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Encapsulated organic semiconductor device and method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3940862

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.