Encapsulated metal resistor

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S537000, C257SE21011

Reexamination Certificate

active

07986027

ABSTRACT:
The method provides a semiconductor structure and method for forming such a structure that provides for protection for resistive layers formed within the structure from contamination from adjacent layers. By encapsulating the resistive layer in a material that is resistant to the diffusion of contaminants it is possible to protect the resistive material during the processing required to manufacture the structure.

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patent: WO 01/06547 (2001-01-01), None
PCT/EP2007/061100, International search report and written opinion, Feb. 2, 2008.
International Search Report and Written Opinion from corresponding International application No. PCT/EP2009/051506 mailed Jul. 6, 2009.

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