Encapsulated damascene with improved overlayer adhesion

Details Encapsulated damascene with improved overlayer adhesion Encapsulated damascene with improved overlayer adhesion

2005-09-30

2010-06-15

Pham, Thanhha (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S751000, C257S758000, C257SE21575

Reexamination Certificate

active

07737556

ABSTRACT:
An integrated circuit device comprising a partially embedded and encapsulated damascene structure and method for forming the same to improve adhesion to an overlying dielectric layer, the integrated circuit device including a conductive material partially embedded in an opening formed in a dielectric layer; wherein said conductive material is encapsulated with a first barrier layer comprising sidewall and bottom portions and a second barrier layer covering a top portion, said conductive material and first barrier layer sidewall portions extending to a predetermined height above an upper surface of the dielectric layer to form a partially embedded damascene.

REFERENCES:
patent: 6653224 (2007-11-01), Gotkis et al.
patent: 2003/0057457 (2003-03-01), Yamada et al.
patent: 2004/0124531 (2004-07-01), Venkatraman et al.
patent: 2005/0014360 (2005-01-01), Yu et al.
patent: 2005/0087871 (2005-04-01), Abe

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