EMR structure with bias control and enhanced linearity of...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07466521

ABSTRACT:
An extraordinary magnetoresistive device EMR having a discontinuous shunt structure. The discontinuous shunt structure improves the linearity of response of the EMR device. The EMR device includes a EMR heterostructure that includes an EMR active layer. The heterostructure can include first, second and third semiconductor layers, with the second layer being sandwiched between the first and third layers. The middle, or second semiconductor layer provides a two dimensional electron gas. The heterostructure has first and second opposed sides, with a pair of voltage leads and a pair of current leads connected with the first side of the structure. The discontinuous shunt structure is connected with the second side of the structure and may be in the form of a series of discontinuous, electrically conductive elements, such as semi-spherical gold elements.

REFERENCES:
patent: 4052748 (1977-10-01), Kuijk
patent: 5965283 (1999-10-01), Solin et al.
patent: 6707122 (2004-03-01), Hines et al.
patent: 6714374 (2004-03-01), Hayashi et al.
patent: 7167346 (2007-01-01), Carey et al.
patent: 7170722 (2007-01-01), Carey et al.
patent: 7203036 (2007-04-01), Chattopadhyay et al.
patent: 7295406 (2007-11-01), Chattopadhyay et al.
patent: 2003/0128478 (2003-07-01), Gill et al.
patent: 2004/0129087 (2004-07-01), Rowe et al.
patent: 2007/0188933 (2007-08-01), Carey
patent: 2008/0019055 (2008-01-01), Gurney et al.
patent: 62-3612 (1987-01-01), None
patent: 5267746 (1993-10-01), None
patent: 6203338 (1994-07-01), None
S.A. Solin et al., “Room Temperature Extraordinary Magnetoresistance of Nonmagnetic Narrow-Gap Semiconductor/Metal composites: Application To Read-Head Sensors For Ultrahigh-Density Magnetic Recording” IEEE Transactopns on Magnetics, vol. 38, No. 1, p. 89-94 Jan. 2002.
Akinaga, Hiro, “High-Sensitive Magnetic-Field-Sensing Materials Composed of Metal/Semiconductor Hybrid Nanostructures” Proceedings of the International Conference on MEMS, NANO and Smart Systems (ICMENS '03).
S.A. Solin et al, “Enhanced Room-Temperature Geometric Magnetoresistence In Inhomogeneous Narrow-Gap Semiconductors” www.sciencemag.org, Science, vol. 289, p. 1530-1532 Sep. 1, 2000.
C.H. Möller et al., “Effect of the Interface Resistance on the Extraordinary Magnetoresistance of Semiconductor/Metal Hybrid Structures” Journal of Superconductivity: Incorporating Novel Magnetism, vol. 16, No. 1, Feb. 2003.
Holx, Matthias, “Semiconductor-Metal Hybrid Structures: Novel Perpsective for Read Heads” Sensors, 2003. Proceedings of IEEE, vol. 2, p. 1245-1248, Oct. 22-24, 2003.
Merkt, Ulrich, “Hybrid Semiconductor/Metal Nanostructures with Two-Dimensional Electron Systems” Superlattices and Microstructures 33 (2003) p. 357-367.
Romankiw, LT., “Magnetically Coupled Barberpole MR Head With Built In Longitudinal Bias Structure and Process” IBM Technical Disclosure Bulletin Jul. 1977, p. 791-793.
J. Moussa et al., “Response of an Extraordinary Magnetoresistence Read Head to a Magnetic Bit” Journal of Applied Physics, vol. 94, No. 2, p. 1110-1113, Jul. 15, 2003.
T. Zhou et al., “Extraordinary Magnetoresistance in Externally Shunted van der Pauw Plates” Applied Physics Letters, vol. 78, No. 5, p. 667-669, Jan. 29, 2001.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

EMR structure with bias control and enhanced linearity of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with EMR structure with bias control and enhanced linearity of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EMR structure with bias control and enhanced linearity of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4031506

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.