Employing deionized water and an abrasive surface to polish a se

Details Employing deionized water and an abrasive surface to polish a se Employing deionized water and an abrasive surface to polish a se

1998-01-22

2000-11-07

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438692, 438693, H01L 21302

Patent

active

061436631

ABSTRACT:
The present invention advantageously provides a method and apparatus for polishing a semiconductor topography by applying a liquid which is void of particles between the topography and an abrasive polishing pad surface. The semiconductor topography is rotated relative to the polishing surface to polish elevationally raised regions of the topography. The particles are fixed within the polishing surface which may comprise a polymeric material. In one embodiment, the liquid may comprise water diluted with acid. If the liquid is adjusted to have a pH between 6.0 and 7.0, the polishing process may be used to remove a silicon dioxide layer from the topography at a faster rate than a silicon nitride layer residing beneath the oxide layer. Alternately, a metal may be selectively removed from above an oxide layer if the polishing liquid has a pH between 2.0 and 5.0. In another embodiment, the liquid may be deionized water. The water does not react with the material being polished. The polishing pad is made of a non-deformable material, and thus does not conform to the elevationally disparate semiconductor topography. Therefore, elevationally raised regions of the topography are removed at a faster rate than elevationally recessed regions.

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