Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode
Reexamination Certificate
2005-08-23
2005-08-23
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With housing or external electrode
C257S133000, C257S138000, C257S147000, C257S150000, C257S180000, C257S181000
Reexamination Certificate
active
06933541
ABSTRACT:
A family of emitter controlled thyristors employ plurality of control schemes for turning the thyristor an and off. In a first embodiment of the present invention a family of thyristors are disclosed all of which comprise a pair of MOS transistors, the first of which is connected in series with the thyristor and a second which provides a negative feedback to the thyristor gate. A negative voltage applied to the gate of the first MOS transistor causes the thyristor to turn on to conduct high currents. A zero to positive voltage applied to the first MOS gate causes the thyristor to turn off. The negative feedback insures that the thyristor only operates at its breakover boundaries of the latching condition with the NPN transistor portion of the thyristor operating in the active region. Under this condition, the anode voltage VAcontinues to increase without significant anode current increase. Emitter turn-off (ETO) thyristor fabrication packages are also disclosed having packaged semiconductor devices controlling the thyristor.
REFERENCES:
patent: 4768075 (1988-08-01), Broich et al.
patent: 5856683 (1999-01-01), Schlangenotto
Loke Steven
Virginia Tech Intellectual Properties Inc.
Whitham Curtis & Christofferson, P.C.
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