Emitter-switched transistor structures

Details Emitter-switched transistor structures Emitter-switched transistor structures

1997-11-05

1999-06-08

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Conductivity modulation device

257139, 257140, 257146, 257147, 257341, 257342, H01L 2358, H01L 2974, H01L 2976, H01L 2994

Patent

active

059106646

ABSTRACT:
Emitter-switched transistor structures are described which have only three terminals. A part of the drain current is used to provide the base current of an emitter-switched NPN transistor and to concurrently cause the injection of holes to conductivity-modulate the emitter-switching MOSFET of the NPN transistor. The reduced on-resistance of the emitter-switching MOSFET causes the emitter-switched NPN transistor to inject more electrons, which in turn leads to more hole injection via a positive feedback mechanism, resulting in a low on-state voltage drop for the device. In another embodiment of the invention, a thyristor structure is provided with the anode switched by a high-voltage MOSFET. Yet another embodiment of the invention provides a four terminal bidirectional device with no diffusions required on the backside of the wafer.

REFERENCES:
patent: 5065213 (1991-11-01), Frisina et al.
patent: 5118635 (1992-06-01), Frisina et al.

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