Emitter switched thyristor

Details Emitter switched thyristor Emitter switched thyristor

1996-12-17

1998-05-26

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257132, 257137, 257146, 257378, H01L 2974, H01L 31111

Patent

active

057570345

ABSTRACT:
A thyristor structure in which the DMOSFET connecting the N.sup.+ emitter to the N.sup.- drift region is eliminated and instead replaced with a DMOSFET connecting the N.sup.+ cathode to the N- drift region providing the base drive for the PNP transistor of the thyristor structure. The thyristor structure of the present invention provides lower on-state voltage drop as compared to prior art EST structures.

REFERENCES:
patent: 5091766 (1992-02-01), Terashima
patent: 5444272 (1995-08-01), Ajit
patent: 5659185 (1997-08-01), Iwamuro

Affiliated with

Also associated with

Rating

Emitter switched thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Emitter switched thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Emitter switched thyristor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1964427