Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Patent
1991-06-24
1992-09-22
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
3072966, H03F 130
Patent
active
051500760
ABSTRACT:
An amplifier circuit has an amplifying transistor having its emitter directly grounded and a biasing transistor for supplying a bias current to the base of the amplifying transistor through its emitter. The biasing transistor receives at its base an output voltage generated and forwarded from a bias voltage generating circuit which is composed of a constant current source, a constant current transistor and another biasing transistor. One bias voltage generating circuit may provide its output voltage commonly to a plurality of biasing transistors each associated with the amplifying transistor. The circuit makes it possible to have the amplifying transistor operate at a desired operation point without using a resistor having a high resistance value. Further, since the emitter of the amplifying transistor is directly grounded, both the noise figure characteristics and high frequency characteristics are improved.
REFERENCES:
patent: 4352057 (1982-09-01), Okada et al.
patent: 4583051 (1986-04-01), Bowers
Biopolar Monolithic Amplifiers For a Gigabit Optical Repeater, O'Hara, et al. IEEE Journal of Solid-State Circuits, vol. SC-19, No. 4, Aug. 1984, pp. 491-497.
0.5-2.6GHz Si-Monolithic Wideband Amplifier IC, Nakata, et al. IEEE 1985 MTT-S Digest, pp. 55-59.
Silicon Bipolar Fixed and Variable Gain Amplifier MMICs For Microwave and Lightwave Applications Up to 6GHz, Kipnis, et al., 1989, IEEE MTT-S Digest.
Mottola Steven
NEC Corporation
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