Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-08-14
2007-08-14
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C315S111810, C445S050000
Reexamination Certificate
active
10962467
ABSTRACT:
An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.
REFERENCES:
patent: 3843916 (1974-10-01), Trotel et al.
patent: 4906894 (1990-03-01), Miyawaki et al.
patent: 4954717 (1990-09-01), Sakamoto et al.
patent: 7025892 (2006-04-01), Bergeron et al.
patent: 2006/0127800 (2006-06-01), Huang et al.
Choi Chang-hoon
Moon Chang-wook
Yoo In-kyeong
Berman Jack I.
Johnston Phillip A
Lee & Morse P.C.
LandOfFree
Emitter for electron-beam projection lithography system, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Emitter for electron-beam projection lithography system, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Emitter for electron-beam projection lithography system, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3868879