Emitter finger structure in a switching transistor

Details Emitter finger structure in a switching transistor Emitter finger structure in a switching transistor

1983-06-06

1986-09-02

Hearn, Brian E.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 148177, 148178, 148188, H01L 2972, H01L 2124

Patent

active

046094148

ABSTRACT:
A particular emitter finger structure in an NPN type switching transistor. The emitter zone is divided into two lateral N type strips. In the central part are provided, on the one hand, a diffusion of N type dopants whose junction depth is small and, on the other hand, a gold diffusion substantially of the same depth as that of the junction depth of said lateral zones. Thus, any possibility of injection at the center of the emitter finger is removed, which allows higher speed transistors to be obtained.

REFERENCES:
patent: 3258371 (1966-06-01), Sukegawa et al.
patent: 3728592 (1973-04-01), Toshi et al.
patent: 3943549 (1976-03-01), Jaecklin et al.
patent: 3947864 (1976-03-01), Yatsuo et al.
patent: 4177477 (1979-12-01), Hokuyo et al.
patent: 4315271 (1982-02-01), Roger
patent: 4345266 (1982-08-01), Owyang

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