Emitter ballast resistor configuration

Details Emitter ballast resistor configuration Emitter ballast resistor configuration

1982-02-22

1985-02-19

James, Andrew J.

357 51, 357 20, H01L 2972, H01L 2702, H01L 2906

Patent

active

045009007

ABSTRACT:
A power transistor having a collector region lying in one principal surface of a semiconductor body, a base region surrounded with the collector region and an emitter region surrounded with the base region, wherein the emitter region includes a main transistor operation portion, a ballast resistance portion and an electrode connection portion, and wherein the part of the base region surrounding the ballast resistance portion is narrower than the part of the base region surrounding the electrode connection portion.

REFERENCES:
patent: 3358197 (1967-12-01), Scarlett
patent: 3971060 (1976-07-01), Leuschner

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