Electric lamp and discharge devices – Electrode and shield structures – Point source cathodes
Reexamination Certificate
2006-06-20
2006-06-20
Patel, Ashok (Department: 2879)
Electric lamp and discharge devices
Electrode and shield structures
Point source cathodes
C313S309000, C313S351000, C313S495000, C313S311000, C257S101000, C257S103000, C257S219000
Reexamination Certificate
active
07064476
ABSTRACT:
Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.
REFERENCES:
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 3816194 (1974-06-01), Kroger et al.
patent: 3875442 (1975-04-01), Wasa et al.
patent: 3894332 (1975-07-01), Nathanson et al.
patent: 3970887 (1976-07-01), Smith et al.
patent: 4301429 (1981-11-01), Goldman et al.
patent: 4400866 (1983-08-01), Yeh et al.
patent: 4420872 (1983-12-01), Solo de Zaldivar
patent: 4718973 (1988-01-01), Abraham et al.
patent: 4766340 (1988-08-01), van der Mast et al.
patent: 4874981 (1989-10-01), Spindt
patent: 4943343 (1990-07-01), Bardai et al.
patent: 4964946 (1990-10-01), Gray et al.
patent: 4968382 (1990-11-01), Jacobson et al.
patent: 5063327 (1991-11-01), Brodie et al.
patent: 5090932 (1992-02-01), Dieumegard et al.
patent: 5138220 (1992-08-01), Kirkpatrick
patent: 5201992 (1993-04-01), Andreadakis et al.
patent: 5269877 (1993-12-01), Bol
patent: 5315126 (1994-05-01), Field
patent: 5330920 (1994-07-01), Soleimani et al.
patent: 5358908 (1994-10-01), Reinberg et al.
patent: 5372973 (1994-12-01), Doan et al.
patent: 5378658 (1995-01-01), Toyoda et al.
patent: 5431777 (1995-07-01), Austin et al.
patent: 5469014 (1995-11-01), Itoh et al.
patent: 5532177 (1996-07-01), Cathey
patent: 5552613 (1996-09-01), Nishibayashi et al.
patent: 5583393 (1996-12-01), Jones
patent: 5662815 (1997-09-01), Kim
patent: 5703380 (1997-12-01), Potter
patent: 5757344 (1998-05-01), Miyata et al.
patent: 5786659 (1998-07-01), Takagi et al.
patent: 6031250 (2000-02-01), Brandes et al.
patent: 6049089 (2000-04-01), Cathey
patent: 6091188 (2000-07-01), Tomihari et al.
patent: 57-43412 (1982-03-01), None
patent: 3-238729 (1991-10-01), None
Hunt, Charles E., Johann T. Trujillo, William J. Orvis, “Structure and Electrical Characteristics of Silicon Field-Emission Microelectronic Devices”, IEEE Transactions on Electron Devices, vol. 38, No. 10, Oct. 1991.
Marcus, R. B., T. S. Ravi, T. Gmitter, H. H. Busta, J. T. Niccum, K. K. Chin and D. Liu. “Atomically Sharp Silicon and Metal Field Emitters,” IEEE Transactions on Electron Devices, vol. 38, No. 10, Oct. 1991.
Wolf, Stanley, Silicon Processing for the VLSI Era, vol. 2: Process Integration, Lattice Press, Sunset Beach, California, pp. 20-27, 1990.
Jones, G. W. and C. T. Sune, “Fabrication of Silicon Point, Wedge, and Trench FEAs”, Technical Digest of IVMC 91, Nagahama 1991, pp. 34-35.
Millman, J. et al.,Integrated Electronics: Analog and Digital Circuits and System, pp. 204-205, 1972 (no month).
Micro)n Technology, Inc.
Patel Ashok
TraskBritt
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