Emissivity calibration apparatus and method

Details Emissivity calibration apparatus and method Emissivity calibration apparatus and method

1987-10-26

1989-08-08

Envall, Jr., Roy N.

Thermal measuring and testing

Thermal testing of a nonthermal quantity

Of susceptibility to thermally induced deteriouration, flaw,...

374 12, 374121, G01N 360, G01N 1700

Patent

active

048547271

ABSTRACT:
An improved method and apparatus are disclosed for calibrating the emissivity characteristics of a semiconductor wafer within a processing chamber by supporting a sample wafer on a graphite susceptor within the chamber and by comparing the temperature measured within the susceptor in close proximity to the center of the wafer with the temperature measured by the emission of radiation from the surface of the wafer through the walls of the processing chamber. Temperature measurements subsequently made from the radiation emitted from the surface of similar wafers are corrected with reference to the measurement made of the temperature within the susceptor on the sample wafer.

REFERENCES:
patent: 4698507 (1987-10-01), Tator et al.

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