Emissive device, process for producing emissive device, and...

Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly

Reexamination Certificate

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C427S069000, C313S506000

Reexamination Certificate

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07819717

ABSTRACT:
A process for producing an emissive device that includes (1) feeding the first material to the first region and the third region and to a side adjacent to a first face of at least one first electrode by a gas-phase process with a first mask to form films; (2) feeding the second material to the second region and the third region such that the second material fed in the third region is stacked above the first material in the third region and to the side adjacent to the first face of each first electrode by a gas-phase process to form the emissive layers; and (3) forming a second electrode at a side of each emissive layer opposite the side adjacent to the first electrode.

REFERENCES:
patent: 6872472 (2005-03-01), Liao et al.
patent: 7304700 (2007-12-01), Park et al.
patent: 2006/0238118 (2006-10-01), Spindler
patent: 2006/0238119 (2006-10-01), Spindler
patent: 2007/0046195 (2007-03-01), Chin et al.
patent: 2007/0200495 (2007-08-01), Kai et al.
patent: A 8-227276 (1996-09-01), None
patent: A-10-3990 (1998-01-01), None
patent: A 2000-91082 (2000-03-01), None
patent: A-2007-234268 (2007-09-01), None

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