Emission process for a single photon, corresponding...

Details Emission process for a single photon, corresponding... Emission process for a single photon, corresponding...

2005-02-08

2005-02-08

Sarkar, Asok Kumar (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S014000, C257S079000, C257S097000, C438S142000, C438S167000, C438S182000, C438S962000

Reexamination Certificate

active

06852993

ABSTRACT:
An integrated circuit includes a semiconductor device forming a single photon source, and includes a MOS transistor on a silicon substrate. The MOS transistor has a mushroom shaped gate for outputting a single electron on its drain in a controlled manner in response to a control voltage applied to its gate. The transistor also includes at least one silicon compatible quantum box. The quantum box is electrically coupled to the drain region of the transistor, and is capable of outputting a single photon on reception of a single electron emitted by the transistor.

REFERENCES:
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Boeuf et al.,16 nm Planar NMOSFET Manufacturable within State-of-the-Art CMOS Process Thanks to Specific Design and Optimisation, International Electron Devices Meeting, Technical Digest (Cat. No. 01CH37224), International Electron Devices Meeting, Washington, DC, Dec. 2-5, 2001, pp. 29.5.1-3, XP002237153.
Moreau et al.,Single-Mode Solid-State Single Photon Source Based on Isolated Quantum Dots in Pillar Microcavities, Applied Physics Letters, Oct. 29, 2001, AIP, USA, vol. 79, No. 18, pp. 2865-2867, XP002237154.

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