Emission layer formed by rapid thermal formation process

Details Emission layer formed by rapid thermal formation process Emission layer formed by rapid thermal formation process

2005-02-08

2005-02-08

Hu, Shouxiang (Department: 2811)

Semiconductor device manufacturing: process

Electron emitter manufacture

C257S009000, C257S010000, C438S022000

Reexamination Certificate

active

06852554

ABSTRACT:
An emitter has a rapid thermal process (RTP) formed emission layer of SiO2, SiOxNyor combinations thereof. The emission layer formed by rapid thermal processing does not require electroforming to stabilize the film. The RTP grown films are stable and exhibit uniform characteristics from device to device.

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